The KSA1962OTU PNP transistor features a maximum collector current of 10A and a collector-emitter voltage of 230V. It has a gain bandwidth product of 30MHz and a minimum current gain of 80. The device is packaged in rail/Tube form and has a maximum power dissipation of 100W. It can operate over a temperature range of -50°C to 150°C, but is not RoHS compliant.
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Technical Specifications
Onsemi KSA1962OTU technical specifications.
General
| Collector Base Voltage (VCBO) | 230V |
| Collector-emitter Voltage-Max | 230V |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 30MHz |
| hFE Min | 80 |
| Max Collector Current | 10A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -50°C |
| Max Power Dissipation | 100W |
| Packaging | Rail/Tube |
| Polarity | PNP |
| RoHS Compliant | No |
| Series | KSA1962 |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi KSA1962OTU Datasheet
Download the complete datasheet for Onsemi KSA1962OTU to view detailed technical specifications.
No datasheet is available for this part.