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Technical Specifications
Onsemi KSB810YTA technical specifications.
General
| Package/Case | TO-226-3 |
| Collector Base Voltage (VCBO) | -30V |
| Collector Emitter Breakdown Voltage | 25V |
| Collector Emitter Voltage (VCEO) | 25V |
| Collector-emitter Voltage-Max | 400mV |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 160MHz |
| Gain Bandwidth Product | 160MHz |
| hFE Min | 70 |
| Max Collector Current | 700mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Ammo Pack |
| Polarity | PNP |
| Power Dissipation | 350mW |
| RoHS Compliant | Yes |
| Transition Frequency | 160MHz |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi KSB810YTA Datasheet
Download the complete datasheet for Onsemi KSB810YTA to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.