The KSC2383YTA_Q is an NPN transistor with a collector base voltage rating of 160V and a continuous collector current of 1A. It has a gain bandwidth product of 100MHz and a maximum operating temperature of 150°C. The transistor is packaged in an ammo pack and has a maximum power dissipation of 900mW. It is suitable for use in applications where high current and voltage are required.
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Technical Specifications
Onsemi KSC2383YTA_Q technical specifications.
General
| Collector Base Voltage (VCBO) | 160V |
| Collector Emitter Saturation Voltage | 160V |
| Collector-emitter Voltage-Max | 160V |
| Continuous Collector Current | 1A |
| Emitter Base Voltage (VEBO) | 6V |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 160 |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 900mW |
| Packaging | Ammo Pack |
| Polarity | NPN |
| Series | KSC2383 |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi KSC2383YTA_Q Datasheet
Download the complete datasheet for Onsemi KSC2383YTA_Q to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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