The MJD200T5G is a surface mount NPN transistor with a collector-emitter breakdown voltage of 25V and a maximum collector current of 100nA. It features a TO-252-3 package and can operate over a temperature range of -65°C to 150°C. The transistor has a maximum power dissipation of 1.4W and a transition frequency of 65MHz.
PackageTO-252-3
MountingSurface Mount
PolarityNPN
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Technical Specifications
Onsemi MJD200T5G technical specifications.
General
| Package/Case | TO-252-3 |
| Collector Emitter Breakdown Voltage | 25V |
| Collector-emitter Voltage-Max | 1.8V |
| Max Collector Current | 100nA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.4W |
| Mount | Surface Mount |
| Package Quantity | 8000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Transition Frequency | 65MHz |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MJD200T5G Datasheet
Download the complete datasheet for Onsemi MJD200T5G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.