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Technical Specifications
Onsemi MOCD217R1VM technical specifications.
General
| Package/Case | SOIC |
| Collector Emitter Saturation Voltage | 400mV |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 400mV |
| Current Transfer Ratio | 130% |
| Forward Current | 60mA |
| Input Type | DC |
| Isolation Voltage | 2.5kV |
| Lead Free | Lead Free |
| Max Collector Current | 150mA |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -40°C |
| Max Output Voltage | 30V |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Number of Circuits | 2 |
| Number of Elements | 2 |
| Output Current per Channel | 150mA |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Power Dissipation | 250mW |
| Reverse Breakdown Voltage | 6V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MOCD217R1VM Datasheet
Download the complete datasheet for Onsemi MOCD217R1VM to view detailed technical specifications.
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