The MPSA65_D27Z is a PNP transistor from Onsemi, packaged in a TO-92-3 case for through-hole mounting. It has a collector-emitter breakdown voltage of 30V and a maximum collector current of 1.2A. The transistor can handle a maximum power dissipation of 625mW and operates over a temperature range of -55°C to 150°C. It has a high current gain of 20,000 and a transition frequency of 100MHz.
PackageTO-92-3
MountingThrough Hole
PolarityPNP
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Technical Specifications
Onsemi MPSA65_D27Z technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 1.5V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 1.5V |
| Emitter Base Voltage (VEBO) | 10V |
| hFE Min | 20000 |
| Max Collector Current | 1.2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| Transition Frequency | 100MHz |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MPSA65_D27Z Datasheet
Download the complete datasheet for Onsemi MPSA65_D27Z to view detailed technical specifications.
No datasheet is available for this part.