The NDC7002N_Q is an N-CHANNEL MOSFET with a drain to source breakdown voltage of 50V and a continuous drain current of 510mA. It has a drain to source resistance of 2 ohms and a power dissipation of 960mW. The device operates over a temperature range of -55°C to 150°C and is packaged on tape and reel. The NDC7002N_Q is suitable for use in a variety of applications where a high current and high voltage are required.
PolarityN-CHANNEL
Power960mW
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Technical Specifications
Onsemi NDC7002N_Q technical specifications.
General
| Continuous Drain Current (ID) | 510mA |
| Drain to Source Breakdown Voltage | 50V |
| Drain to Source Resistance | 2R |
| Fall Time | 6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 960mW |
| Turn-Off Delay Time | 11ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi NDC7002N_Q Datasheet
Download the complete datasheet for Onsemi NDC7002N_Q to view detailed technical specifications.
No datasheet is available for this part.