The NDM3000_L86Z is a P-channel MOSFET with a continuous drain current of 3A and a drain to source breakdown voltage of 30V. It has a drain to source resistance of 125mR and a power dissipation of 2.5W. The device operates over a temperature range of -55°C to 150°C and is packaged in a rail/Tube format with 45 units per package.
PolarityP-CHANNEL
Power2.5W
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Technical Specifications
Onsemi NDM3000_L86Z technical specifications.
General
| Continuous Drain Current (ID) | 3A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 125mR |
| Fall Time | 5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 45 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.5W |
| Turn-Off Delay Time | 21ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NDM3000_L86Z Datasheet
Download the complete datasheet for Onsemi NDM3000_L86Z to view detailed technical specifications.
No datasheet is available for this part.
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