The NDP6020P_Q is a P-channel MOSFET with a maximum operating temperature of 175°C and a minimum operating temperature of -65°C. It features a continuous drain current of -24A and a drain to source breakdown voltage of -20V. The device has a drain to source resistance of 41mR and a power dissipation of 60W. It is packaged in a TO-220AB case and is available in rail or tube packaging.
PackageTO-220AB
PolarityP-CHANNEL
Power60W
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Technical Specifications
Onsemi NDP6020P_Q technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | -24A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 41mR |
| Fall Time | 70ns |
| Gate to Source Voltage (Vgs) | 8V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -65°C |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 60W |
| Turn-Off Delay Time | 120ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi NDP6020P_Q Datasheet
Download the complete datasheet for Onsemi NDP6020P_Q to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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