The NDS332P_Q is a P-channel MOSFET in a SOT-23 package. It operates over a temperature range of -55°C to 150°C and has a maximum continuous drain current of -1A. The device has a drain to source breakdown voltage of -20V and a drain to source resistance of 410mR. The NDS332P_Q has a fall time of 30ns and a turn-off delay time of 25ns. It is packaged in tape and reel form and is suitable for use in high-frequency applications.
PackageSOT-23
PolarityP-CHANNEL
Power500mW
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Technical Specifications
Onsemi NDS332P_Q technical specifications.
General
| Package/Case | SOT-23 |
| Continuous Drain Current (ID) | -1A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 410mR |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 8V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 500mW |
| Turn-Off Delay Time | 25ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi NDS332P_Q Datasheet
Download the complete datasheet for Onsemi NDS332P_Q to view detailed technical specifications.
No datasheet is available for this part.