The NDS335N_Q is an N-channel MOSFET with a drain to source breakdown voltage of 20V and a continuous drain current of 1.7A. It has a power dissipation of 500mW and a maximum operating temperature of 150°C. The device is packaged in a SOT-23 package and is available on tape and reel. The MOSFET has a gate to source voltage of 8V and a drain to source resistance of 140mR.
PackageSOT-23
PolarityN-CHANNEL
Power500mW
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Technical Specifications
Onsemi NDS335N_Q technical specifications.
General
| Package/Case | SOT-23 |
| Continuous Drain Current (ID) | 1.7A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 140mR |
| Fall Time | 29ns |
| Gate to Source Voltage (Vgs) | 8V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 500mW |
| Turn-Off Delay Time | 28ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi NDS335N_Q Datasheet
Download the complete datasheet for Onsemi NDS335N_Q to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.