The NDS355ANQ is an N-CHANNEL MOSFET with a drain to source breakdown voltage of 30V and a continuous drain current of 1.7A. It can handle a maximum power dissipation of 500mW and operates within a temperature range of -55°C to 150°C. The device features a gate to source voltage of 20V and a drain to source resistance of 2 ohms. The NDS355ANQ is available in a tape and reel packaging format.
PolarityN-CHANNEL
Power500mW
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Technical Specifications
Onsemi NDS355ANQ technical specifications.
General
| Continuous Drain Current (ID) | 1.7A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 2R |
| Fall Time | 32ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 500mW |
| Turn-Off Delay Time | 13ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi NDS355ANQ Datasheet
Download the complete datasheet for Onsemi NDS355ANQ to view detailed technical specifications.
No datasheet is available for this part.