The NDS356AP_L99Z is a P-channel MOSFET from Onsemi, packaged in the SOT-23 case, suitable for continuous drain currents of up to 1.1A. It can withstand a drain to source breakdown voltage of -30V and features a drain to source resistance of 300 milliohms. The device has a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It is available in a tape and reel packaging format with a quantity of 3000 units per package.
PackageSOT-23
PolarityP-CHANNEL
Power500mW
Quick Jump:
Technical Specifications
Onsemi NDS356AP_L99Z technical specifications.
General
| Package/Case | SOT-23 |
| Continuous Drain Current (ID) | 1.1A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 300mR |
| Fall Time | 17ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 500mW |
| Turn-Off Delay Time | 53ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NDS356AP_L99Z Datasheet
Download the complete datasheet for Onsemi NDS356AP_L99Z to view detailed technical specifications.
No datasheet is available for this part.