The NDS8958_Q is a P-CHANNEL MOSFET with a drain to source breakdown voltage of 30V and a continuous drain current of -4A. It has a drain to source resistance of 35mR and a power dissipation of 2W. The device is packaged in tape and reel format and has a maximum operating temperature of 150°C and a minimum operating temperature of -55°C.
PolarityP-CHANNEL
Power2W
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Technical Specifications
Onsemi NDS8958_Q technical specifications.
General
| Continuous Drain Current (ID) | -4A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 35mR |
| Fall Time | 19ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2W |
| Turn-Off Delay Time | 40ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi NDS8958_Q Datasheet
Download the complete datasheet for Onsemi NDS8958_Q to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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