The NDS9410A_Q is a N-CHANNEL MOSFET with a Drain to Source Breakdown Voltage of 30V and a Continuous Drain Current of 7.3A. It can handle a Power Dissipation of 2.5W and has a Max Operating Temperature of 150°C. The device is packaged in Tape and Reel format and has a Turn-Off Delay Time of 18ns and a Fall Time of 5ns.
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
Onsemi NDS9410A_Q technical specifications.
General
| Continuous Drain Current (ID) | 7.3A |
| Drain to Source Breakdown Voltage | 30V |
| Fall Time | 5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Turn-Off Delay Time | 18ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi NDS9410A_Q Datasheet
Download the complete datasheet for Onsemi NDS9410A_Q to view detailed technical specifications.
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