The NDS9435A_Q is a P-channel MOSFET with a breakdown voltage of -30V and a continuous drain current of -5.3A. It has a drain to source resistance of 42mR and a power dissipation of 2.5W. The device operates over a temperature range of -55°C to 175°C and is available in tape and reel packaging.
PolarityP-CHANNEL
Power2.5W
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Technical Specifications
Onsemi NDS9435A_Q technical specifications.
General
| Continuous Drain Current (ID) | -5.3A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 42mR |
| Fall Time | 9ns |
| Gate to Source Voltage (Vgs) | 25V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.5W |
| Turn-Off Delay Time | 14ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi NDS9435A_Q Datasheet
Download the complete datasheet for Onsemi NDS9435A_Q to view detailed technical specifications.
No datasheet is available for this part.