The NDT2955_Q is a P-channel MOSFET from Onsemi, packaged in the SOT-223 case, available on tape and reel. It can handle continuous drain currents of up to -2.5A and has a drain to source breakdown voltage of -60V. The device has a drain to source resistance of 95 milliohms and a power dissipation of 3 watts. The NDT2955_Q operates over a temperature range of -55°C to 150°C.
PackageSOT-223
PolarityP-CHANNEL
Power3W
Quick Jump:
Technical Specifications
Onsemi NDT2955_Q technical specifications.
General
| Package/Case | SOT-223 |
| Continuous Drain Current (ID) | -2.5A |
| Drain to Source Breakdown Voltage | -60V |
| Drain to Source Resistance | 95mR |
| Fall Time | 6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 3W |
| Turn-Off Delay Time | 19ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi NDT2955_Q Datasheet
Download the complete datasheet for Onsemi NDT2955_Q to view detailed technical specifications.
No datasheet is available for this part.