MOSFET N-Channel FET Enhancement Mode
PackageSOT-223
PolarityN-CHANNEL
Power3W
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Technical Specifications
Onsemi NDT451AN_Q technical specifications.
General
| Package/Case | SOT-223 |
| Continuous Drain Current (ID) | 7.2A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 35mR |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3W |
| Turn-Off Delay Time | 29ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi NDT451AN_Q Datasheet
Download the complete datasheet for Onsemi NDT451AN_Q to view detailed technical specifications.
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