The NZT660_Q is a PNP transistor from Onsemi, packaged in a SOT-223 case. It can handle a collector-emitter voltage of up to 60V and a collector current of up to 3A. The device has a gain bandwidth product of 75MHz and a minimum current gain of 70. It operates over a temperature range of -55°C to 150°C and has a maximum power dissipation of 2W.
PackageSOT-223
PolarityPNP
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Technical Specifications
Onsemi NZT660_Q technical specifications.
General
| Package/Case | SOT-223 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Saturation Voltage | 60V |
| Collector-emitter Voltage-Max | 60V |
| Continuous Collector Current | 3A |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 75MHz |
| hFE Min | 70 |
| Max Collector Current | 3A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Series | NZT660 |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi NZT660_Q Datasheet
Download the complete datasheet for Onsemi NZT660_Q to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.