The P1086_Q is a P-channel MOSFET from Onsemi, packaged in a TO-92 case. It has a maximum drain to source breakdown voltage of -30V and a maximum gate to source voltage of 30V. The device can handle a continuous drain current of 10nA and a maximum power dissipation of 350mW. The P1086_Q is available in bulk packaging.
PackageTO-92
PolarityP-CHANNEL
Power350mW
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Technical Specifications
Onsemi P1086_Q technical specifications.
General
| Package/Case | TO-92 |
| Continuous Drain Current (ID) | 10nA |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 75R |
| Drain to Source Voltage (Vdss) | -30V |
| Gate to Source Voltage (Vgs) | 30V |
| Max Power Dissipation | 350mW |
| Packaging | Bulk |
| Polarity | P-CHANNEL |
| Power Dissipation | 350mW |
| Series | P1086 |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi P1086_Q Datasheet
Download the complete datasheet for Onsemi P1086_Q to view detailed technical specifications.
No datasheet is available for this part.