Reflective optical sensor with phototransistor output, featuring a 3.81mm sensing distance. This component operates with a 40mA forward current and a 30V collector-emitter breakdown voltage. It offers a response time of 8µs and a maximum collector current of 20mA. Designed for through-hole mounting, it operates within a temperature range of -40°C to 85°C and is RoHS compliant.
MountingThrough Hole
Power100mW
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Technical Specifications
Onsemi QRB1114 technical specifications.
General
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 30V |
| Fall Time | 8us |
| Forward Current | 40mA |
| Input Current | 40mA |
| Lead Free | Lead Free |
| Max Collector Current | 20mA |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -40°C |
| Mount | Through Hole |
| Number of Channels | 2 |
| Number of Elements | 1 |
| Operating Supply Voltage | 1.7V |
| Output Type | Phototransistor |
| Output Voltage | 30V |
| Package Quantity | 50 |
| Packaging | Bulk |
| Power Dissipation | 100mW |
| Response Time | 8us |
| Reverse Breakdown Voltage | 5V |
| Reverse Voltage | 5V |
| RoHS Compliant | Yes |
| Sensing Distance | 3.81mm |
| DC Rated Voltage | 30V |
| Wavelength | 940nm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi QRB1114 Datasheet
Download the complete datasheet for Onsemi QRB1114 to view detailed technical specifications.
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