MountingChassis Mount, Screw
Power100mW
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Technical Specifications
Onsemi QRB1133 technical specifications.
General
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 30V |
| Fall Time | 8us |
| Forward Current | 40mA |
| Lead Free | Lead Free |
| Max Collector Current | 20mA |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -40°C |
| Mount | Chassis Mount, Screw |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Operating Supply Voltage | 1.7V |
| Output Type | Phototransistor |
| Packaging | Bulk |
| Power Dissipation | 100mW |
| Response Time | 8us |
| Reverse Breakdown Voltage | 5V |
| Reverse Voltage (DC) | 5V |
| RoHS Compliant | Yes |
| Sensing Distance | 3.81mm |
| Wavelength | 940nm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi QRB1133 Datasheet
Download the complete datasheet for Onsemi QRB1133 to view detailed technical specifications.
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