Reflective phototransistor with 30V collector-emitter breakdown voltage and 40mA forward current. Features 8µs fall time and 20mA max collector current. Operates from 1.7V supply voltage with a 940nm wavelength. Mounts via chassis or screw, packaged in bulk.
MountingChassis Mount, Screw
Power100mW
Quick Jump:
Technical Specifications
Onsemi QRB1134 technical specifications.
General
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 30V |
| Fall Time | 8us |
| Forward Current | 40mA |
| Input Current | 40mA |
| Lead Free | Lead Free |
| Max Collector Current | 20mA |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -40°C |
| Mount | Chassis Mount, Screw |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Operating Supply Voltage | 1.7V |
| Output Type | Phototransistor |
| Output Voltage | 30V |
| Package Quantity | 20 |
| Packaging | Bulk |
| Power Dissipation | 100mW |
| Reach SVHC Compliant | No |
| Response Time | 8us |
| Reverse Breakdown Voltage | 5V |
| Reverse Voltage | 5V |
| RoHS Compliant | Yes |
| Sensing Distance | 3.81mm |
| DC Rated Voltage | 5V |
| Wavelength | 940nm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi QRB1134 Datasheet
Download the complete datasheet for Onsemi QRB1134 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
