The QSB373ZR is a single-element NPN transistor from Onsemi with a collector-emitter voltage rating of 30V and a maximum power dissipation of 75mW. It is packaged in a surface-mount SMD/SMT package and is suitable for operation over the temperature range of -40°C to 85°C. The transistor is available in a bulk packaging quantity of 1000 units.
PackageSMD/SMT
MountingSurface Mount
PolarityNPN
Power75mW
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Technical Specifications
Onsemi QSB373ZR technical specifications.
General
| Package/Case | SMD/SMT |
| Collector Emitter Voltage (VCEO) | 30V |
| Fall Time | 15000ns |
| Lens Style | TRANSPARENT |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -40°C |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 75mW |
| Weight | 0.09g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi QSB373ZR Datasheet
Download the complete datasheet for Onsemi QSB373ZR to view detailed technical specifications.
No datasheet is available for this part.