The QSE214C is a radial package NPN transistor with a collector-emitter breakdown voltage of 30V and a maximum power dissipation of 100mW. It operates over a temperature range of -40°C to 100°C and is RoHS compliant. The transistor is packaged in bulk and has a side view orientation.
PackageRadial
MountingThrough Hole
PolarityNPN
Power100mW
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Technical Specifications
Onsemi QSE214C technical specifications.
General
| Package/Case | Radial |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 30V |
| Fall Time | 8us |
| Lead Free | Lead Free |
| Lens Style | TRANSPARENT |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 100mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Orientation | Side View |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 100mW |
| RoHS Compliant | Yes |
| Viewing Angle | 50° |
| Wavelength | 880nm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi QSE214C Datasheet
Download the complete datasheet for Onsemi QSE214C to view detailed technical specifications.
No datasheet is available for this part.