Onsemi
SI2337DS-T1-GE3
VISHAY - SI2337DS-T1-GE3 - MOSFET transistor, P Kanal, -2.2 A, -80 V, 0.216 ohm, -10 V, -4 V
VISHAY - SI2337DS-T1-GE3 - MOSFET transistor, P Kanal, -2.2 A, -80 V, 0.216 ohm, -10 V, -4 V
PackageSOT-23-6
MountingSurface Mount
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Technical Specifications
Onsemi SI2337DS-T1-GE3 technical specifications.
General
| Package/Case | SOT-23-6 |
| Continuous Drain Current (ID) | 2.3A |
| Drain to Source Voltage (Vdss) | 150V |
| Input Capacitance | 345pF |
| Max Power Dissipation | 1.6W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Rds On Max | 144mR |
| Series | PowerTrench® |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi SI2337DS-T1-GE3 Datasheet
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