Onsemi
SI2367DS-T1-GE3
SI2367DS-T1-GE3 P-channel MOSFET Transistor, 2.2 A, 20 V, 3-Pin TO-236 | Siliconix / Vishay SI2367DS-T1-GE3
SI2367DS-T1-GE3 P-channel MOSFET Transistor, 2.2 A, 20 V, 3-Pin TO-236 | Siliconix / Vishay SI2367DS-T1-GE3
PackageTO-226-3
MountingThrough Hole
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Technical Specifications
Onsemi SI2367DS-T1-GE3 technical specifications.
General
| Package/Case | TO-226-3 |
| Continuous Drain Current (ID) | 500mA |
| Drain to Source Voltage (Vdss) | 60V |
| Input Capacitance | 40pF |
| Max Power Dissipation | 830mW |
| Mount | Through Hole |
| Packaging | Tape and Reel |
| Rds On Max | 5R |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi SI2367DS-T1-GE3 Datasheet
Download the complete datasheet for Onsemi SI2367DS-T1-GE3 to view detailed technical specifications.
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