The SI3457DV_Q is a P-channel MOSFET with a drain to source breakdown voltage of -30V and a continuous drain current of -4A. It can handle a maximum power dissipation of 1.6W and has a maximum operating temperature of 150°C. The device is packaged in tape and reel format and has a gate to source voltage of 25V. The MOSFET has a fall time of 12ns and a turn-off delay time of 16ns.
PolarityP-CHANNEL
Power1.6W
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Technical Specifications
Onsemi SI3457DV_Q technical specifications.
General
| Continuous Drain Current (ID) | -4A |
| Drain to Source Breakdown Voltage | -30V |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 25V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.6W |
| Turn-Off Delay Time | 16ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi SI3457DV_Q Datasheet
Download the complete datasheet for Onsemi SI3457DV_Q to view detailed technical specifications.
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