The SI3499DV-T1-GE3 is a high-voltage QFET with a maximum drain to source voltage of 900V and continuous drain current of 1.7A. It features a maximum power dissipation of 2.5W and an on-resistance of 7.2 ohms. The device is packaged in a TO-251-3 case and is suitable for through-hole mounting. It is available in rail or tube packaging.
PackageTO-251-3
MountingThrough Hole
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Technical Specifications
Onsemi SI3499DV-T1-GE3 technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 1.7A |
| Drain to Source Voltage (Vdss) | 900V |
| Input Capacitance | 500pF |
| Max Power Dissipation | 2.5W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Rds On Max | 7.2R |
| Series | QFET™ |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi SI3499DV-T1-GE3 Datasheet
Download the complete datasheet for Onsemi SI3499DV-T1-GE3 to view detailed technical specifications.
No datasheet is available for this part.