SI4214DDY-T1-GE3

Dual N-Channel 30 V 0.0195 Ohm 5 W Surface Mount Mosfet - SOIC-8

PackageSOIC

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Onsemi SI4214DDY-T1-GE3 technical specifications.

Package/Case

SOIC

Continuous Drain Current (ID)

1.2A

Drain to Source Voltage (Vdss)

100V

FET Type

2 N-Channel

Input Capacitance

70pF

Max Power Dissipation

960mW

Rds On Max

350mR

Series

PowerTrench®

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.