The SI4866DY-T1-E3 is a UniFET power MOSFET from Onsemi, featuring a maximum drain to source voltage of 500V and continuous drain current of 11.5A. It has a maximum power dissipation of 165W and an on-resistance of 700mR. The device is packaged in a TO-263-3 surface mount package, available on tape and reel. It operates over a temperature range of -40°C to 175°C.
PackageTO-263-3
MountingSurface Mount
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Technical Specifications
Onsemi SI4866DY-T1-E3 technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 11.5A |
| Drain to Source Voltage (Vdss) | 500V |
| Input Capacitance | 1.395nF |
| Max Power Dissipation | 165W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Rds On Max | 700mR |
| Series | UniFET™ |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi SI4866DY-T1-E3 Datasheet
Download the complete datasheet for Onsemi SI4866DY-T1-E3 to view detailed technical specifications.
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