The SSS45N20B_FP001_Q is a high-power N-channel MOSFET with a maximum operating temperature range of -55°C to 150°C. It can handle a continuous drain current of 35A and a drain to source breakdown voltage of 200V. The device has a drain to source resistance of 65mR and a power dissipation of 57W. It is packaged in a rail/Tube format and is suitable for high-power applications.
PolarityN-CHANNEL
Power57W
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Technical Specifications
Onsemi SSS45N20B_FP001_Q technical specifications.
General
| Continuous Drain Current (ID) | 35A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 65mR |
| Fall Time | 270ns |
| Gate to Source Voltage (Vgs) | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 57W |
| Turn-Off Delay Time | 360ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi SSS45N20B_FP001_Q Datasheet
Download the complete datasheet for Onsemi SSS45N20B_FP001_Q to view detailed technical specifications.
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