The TIP142FTU is a high-power NPN transistor with a collector-emitter breakdown voltage of 100V and a maximum collector current of 10A. It can handle a maximum power dissipation of 125W and operates over a temperature range of -65°C to 150°C. This transistor is available in a through-hole package and is compliant with RoHS regulations.
MountingThrough Hole
PolarityNPN
Quick Jump:
Technical Specifications
Onsemi TIP142FTU technical specifications.
General
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 2V |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector-emitter Voltage-Max | 3V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 500 |
| Max Collector Current | 10A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 125W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi TIP142FTU Datasheet
Download the complete datasheet for Onsemi TIP142FTU to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
