The TN5415A_Q PNP transistor features a TO-226 package and a maximum collector current of 100mA. It can withstand a collector-emitter voltage of up to 200V and a collector-base voltage of 200V. The device has a minimum current gain of 30 and a maximum power dissipation of 1W. Operating temperature range is from -55°C to 150°C.
PackageTO-226
PolarityPNP
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Technical Specifications
Onsemi TN5415A_Q technical specifications.
General
| Package/Case | TO-226 |
| Collector Base Voltage (VCBO) | 200V |
| Collector-emitter Voltage-Max | 200V |
| Emitter Base Voltage (VEBO) | 4V |
| hFE Min | 30 |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Packaging | Bulk |
| Polarity | PNP |
| Series | TN5415 |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi TN5415A_Q Datasheet
Download the complete datasheet for Onsemi TN5415A_Q to view detailed technical specifications.
No datasheet is available for this part.