NPN phototransistor array featuring a 36° viewing angle and 850nm wavelength. This through-hole component offers a collector-emitter breakdown voltage of 35V and a maximum collector current of 50mA. Housed in a clear, domed SDIP package with a 7.4mm length, 3.6mm height, and 2.1mm width, it operates within a temperature range of -40°C to 80°C with a power dissipation of 90mW. Includes three elements and is RoHS compliant.
PackageSDIP
MountingThrough Hole
PolarityNPN
Power90mW
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Technical Specifications
Osram BPX 83 technical specifications.
General
Package/Case
SDIP
Collector Emitter Breakdown Voltage
35V
Collector Emitter Voltage (VCEO)
35V
Collector-emitter Voltage-Max
35V
Fall Time
6us
Height
3.6mm
Length
7.4mm
Lens Color
Clear
Lens Style
TRANSPARENT, Domed
Max Breakdown Voltage
35V
Max Collector Current
50mA
Max Operating Temperature
80°C
Min Operating Temperature
-40°C
Max Power Dissipation
90mW
Mount
Through Hole
Number of Elements
3
Orientation
Top View
Package Material
SILICON
Package Quantity
250
Polarity
NPN
Power Dissipation
90mW
Radiation Hardening
No
RoHS Compliant
Yes
Viewing Angle
36°
Wavelength
850nm
Width
2.1mm
Compliance
RoHS
Compliant
Datasheet
Osram BPX 83 Datasheet
Download the complete datasheet for Osram BPX 83 to view detailed technical specifications.
No datasheet is available for this part.