NPN phototransistor with a 50V collector-emitter breakdown voltage and 50mA maximum collector current. Features an 880nm wavelength, TO-18 package with a domed lens, and through-hole mounting. Operates across a temperature range of -40°C to 125°C with 220mW maximum power dissipation. Tin-matte contact plating and a silicon package material.
PackageTO-18
MountingThrough Hole
PolarityNPN
Power220mW
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Technical Specifications
Osram BPX38 technical specifications.
General
Package/Case
TO-18
Collector Emitter Breakdown Voltage
50V
Collector Emitter Saturation Voltage
200mV
Collector Emitter Voltage (VCEO)
50V
Collector-emitter Voltage-Max
50V
Contact Plating
Tin, Matte
Lens Style
Domed
Max Breakdown Voltage
50V
Max Collector Current
50mA
Max Operating Temperature
125°C
Min Operating Temperature
-40°C
Max Power Dissipation
220mW
Mount
Through Hole
Number of Elements
1
Orientation
Top View
Package Material
SILICON
Package Quantity
1000
Packaging
Bulk
Polarity
NPN
Power Dissipation
220mW
Radiation Hardening
No
RoHS Compliant
Yes
Viewing Angle
80°
Wavelength
880nm
Compliance
RoHS
Compliant
Datasheet
Osram BPX38 Datasheet
Download the complete datasheet for Osram BPX38 to view detailed technical specifications.
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