NPN phototransistor with 880nm wavelength, housed in a TO-18 package. Features a 50V collector-emitter breakdown voltage and a maximum collector current of 50mA. This through-hole mounted component offers a 220mW power dissipation and operates within a temperature range of -40°C to 125°C. The domed lens style provides a 30° viewing angle.
PackageTO-18
MountingThrough Hole
PolarityNPN
Power220mW
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Technical Specifications
Osram BPX43-4 technical specifications.
General
Package/Case
TO-18
Collector Emitter Breakdown Voltage
50V
Collector Emitter Saturation Voltage
240mV
Collector Emitter Voltage (VCEO)
50V
Collector-emitter Voltage-Max
50V
Contact Plating
Tin, Matte
Diameter
4.8mm
Fall Time
15us
Height
6.2mm
Lens Style
Domed
Max Breakdown Voltage
50V
Max Collector Current
50mA
Max Operating Temperature
125°C
Min Operating Temperature
-40°C
Max Power Dissipation
220mW
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Orientation
Top View
Package Material
SILICON
Package Quantity
1000
Packaging
Bulk
Polarity
NPN
Power Dissipation
220mW
Radiation Hardening
No
RoHS Compliant
Yes
Viewing Angle
30°
Wavelength
880nm
Compliance
RoHS
Compliant
Datasheet
Osram BPX43-4 Datasheet
Download the complete datasheet for Osram BPX43-4 to view detailed technical specifications.
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