The BPX87 is a 3-channel NPN phototransistor array with a peak wavelength of 850nm. It operates over a temperature range of -40 to 80 degrees Celsius. The device has a maximum collector-emitter voltage of 35V and a maximum collector current of 50mA. It can dissipate up to 90mW of power. The phototransistor array is fabricated using NPN transistor technology and features a domed lens shape with a transparent color. The device is suitable for use in optical sensing applications.
PolarityNPN
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Technical Specifications
Osram BPX87 technical specifications.
General
| Phototransistor Type | Phototransistor |
| Type | Array |
| Polarity | NPN |
| Half Intensity Angle Degrees | 36° |
| Min Operating Temperature | -40°C |
| Max Operating Temperature | 80°C |
| Viewing Orientation | Top View |
| Peak Wavelength | 850nm |
| Maximum Light Current | 320(Min)uA |
| Lens Shape Type | Domed |
| Number of Channels per Chip | 3 |
| Fabrication Technology | NPN Transistor |
| Lens Color | Transparent |
| Maximum Collector-Emitter Voltage | 35V |
| Maximum Dark Current | 50nA |
| Maximum Collector Current | 50mA |
| Maximum Collector-Emitter Saturation Voltage | 0.15V |
| Maximum Power Dissipation | 90mW |
| Pin Count | 6 |
Compliance
| RoHS | Yes |
| RoHS Version | 2011/65/EU, 2015/863 |
Datasheet
Osram BPX87 Datasheet
Download the complete datasheet for Osram BPX87 to view detailed technical specifications.
No datasheet is available for this part.