NPN phototransistor featuring a silicon chip for infrared detection at 850nm. This 2-pin, side-looking component offers a 30V collector-emitter breakdown voltage and a maximum collector current of 50mA. Encased in a radial package with a domed lens, it operates within a temperature range of -40°C to 100°C and has a power dissipation of 100mW. Ideal for through-hole mounting, this RoHS compliant device exhibits a 70° viewing angle and a fall time of 10µs.
PackageRadial
MountingThrough Hole
PolarityNPN
Power100mW
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Technical Specifications
Osram LPT 80A technical specifications.
General
Package/Case
Radial
Collector Emitter Breakdown Voltage
30V
Collector Emitter Saturation Voltage
150mV
Collector Emitter Voltage (VCEO)
30V
Collector-emitter Voltage-Max
30V
Fall Time
10us
Height
5.84mm
Length
4.57mm
Lens Style
Domed
Max Collector Current
50mA
Max Operating Temperature
100°C
Min Operating Temperature
-40°C
Max Power Dissipation
100mW
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Orientation
Side View
Packaging
Bulk
Polarity
NPN
Power Dissipation
100mW
Radiation Hardening
No
RoHS Compliant
Yes
Viewing Angle
70°
Wavelength
850nm
Width
2.54mm
Compliance
RoHS
Compliant
Datasheet
Osram LPT 80A Datasheet
Download the complete datasheet for Osram LPT 80A to view detailed technical specifications.
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