Silicon NPN phototransistor for optical sensing applications. Features 880nm wavelength sensitivity, 35V collector-emitter breakdown voltage, and 50mA maximum collector current. Housed in a T-1 package with a domed lens for a 50° viewing angle. Operating temperature range from -40°C to 100°C, with 165mW power dissipation. Through-hole mount, RoHS compliant.
PackageT
MountingThrough Hole
PolarityNPN
Power165mW
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Technical Specifications
Osram SFH 310 technical specifications.
General
Package/Case
T
Collector Emitter Breakdown Voltage
35V
Collector Emitter Saturation Voltage
150mV
Collector Emitter Voltage (VCEO)
35V
Collector-emitter Voltage-Max
35V
Fall Time
12us
Height
4.8mm
Length
3.4mm
Lens Style
Domed
Max Breakdown Voltage
35V
Max Collector Current
50mA
Max Operating Temperature
100°C
Min Operating Temperature
-40°C
Max Power Dissipation
165mW
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Orientation
Top View
Package Quantity
2000
Packaging
Bulk
Polarity
NPN
Power Dissipation
165mW
Radiation Hardening
No
RoHS Compliant
Yes
Viewing Angle
50°
Wavelength
880nm
Width
3.4mm
Compliance
RoHS
Compliant
Datasheet
Osram SFH 310 Datasheet
Download the complete datasheet for Osram SFH 310 to view detailed technical specifications.
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