Silicon NPN phototransistor chip for optical sensing applications. Features a 35V collector-emitter breakdown voltage and a maximum collector current of 15mA. Operates within a temperature range of -40°C to 100°C with a power dissipation of 165mW. This through-hole component has a T-1 package with a domed lens, a 24° viewing angle, and a 9µs fall time, sensitive to 860nm wavelengths.
PackageT
MountingThrough Hole
PolarityNPN
Power165mW
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Technical Specifications
Osram SFH309-5/6 technical specifications.
General
Package/Case
T
Collector Emitter Breakdown Voltage
35V
Collector Emitter Saturation Voltage
200mV
Collector Emitter Voltage (VCEO)
35V
Collector-emitter Voltage-Max
35V
Fall Time
9us
Height
5.2mm
Length
4mm
Lens Style
Domed
Max Breakdown Voltage
35V
Max Collector Current
15mA
Max Operating Temperature
100°C
Min Operating Temperature
-40°C
Max Power Dissipation
165mW
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Orientation
Top View
Package Quantity
2000
Packaging
Bulk
Polarity
NPN
Power Dissipation
165mW
Radiation Hardening
No
RoHS Compliant
Yes
Viewing Angle
24°
Wavelength
860nm
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Osram SFH309-5/6 Datasheet
Download the complete datasheet for Osram SFH309-5/6 to view detailed technical specifications.
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