NPN phototransistor for surface mount applications, featuring a 980nm infrared wavelength and a 120° viewing angle. This silicon chip offers a 35V collector-emitter breakdown voltage and a maximum collector current of 15mA. Operating within a -40°C to 100°C temperature range, it has a power dissipation of 165mW and a fall time of 8µs. Packaged in tape and reel, this RoHS compliant component is designed for efficient optical sensing.
PackageSMD/SMT
MountingSurface Mount
PolarityNPN
Power165mW
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Technical Specifications
Osram SFH3211FA-3/4-Z technical specifications.
General
| Package/Case | SMD/SMT |
| Collector Emitter Breakdown Voltage | 35V |
| Collector Emitter Saturation Voltage | 150mV |
| Collector Emitter Voltage (VCEO) | 35V |
| Collector-emitter Voltage-Max | 35V |
| Fall Time | 8us |
| Lens Style | Flat |
| Max Breakdown Voltage | 35V |
| Max Collector Current | 15mA |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 165mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Orientation | Top View |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 165mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | TOPLED |
| Viewing Angle | 120° |
| Wavelength | 980nm |
Compliance
| RoHS | Compliant |
Datasheet
Osram SFH3211FA-3/4-Z Datasheet
Download the complete datasheet for Osram SFH3211FA-3/4-Z to view detailed technical specifications.
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