The Panasonic DMA202010R is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It has a gain bandwidth product of 150MHz and a maximum power dissipation of 300mW. The transistor is packaged in a halogen-free and RoHS compliant 5-pin SC-74A surface mount package, suitable for use in high-temperature applications up to 150°C.
MountingSurface Mount
PolarityPNP
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Technical Specifications
Panasonic DMA202010R technical specifications.
General
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | -500mV |
| Collector-emitter Voltage-Max | 500mV |
| Emitter Base Voltage (VEBO) | -7V |
| Gain Bandwidth Product | 150MHz |
| Height | 1.1mm |
| hFE Min | 210 |
| Length | 2.9mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| RoHS Compliant | Yes |
| Transition Frequency | 150MHz |
| Width | 1.5mm |
Compliance
| RoHS | Compliant |
Datasheet
Panasonic DMA202010R Datasheet
Download the complete datasheet for Panasonic DMA202010R to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.