
NPN silicon bipolar junction transistor, surface mount, featuring a 50V collector-emitter breakdown voltage and 100mA continuous collector current. Offers a 300mV collector-emitter saturation voltage and a 150MHz transition frequency. Housed in a compact MO-178AA (SC-74A, MINI5-G3-B) package with a minimum hFE of 210. This component is HALOGEN FREE and RoHS COMPLIANT, supplied in tape and reel packaging.
Panasonic DMC201010R technical specifications.
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 300mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Continuous Collector Current | 100mA |
| Emitter Base Voltage (VEBO) | 7V |
| Gain Bandwidth Product | 150MHz |
| Height | 1.1mm |
| hFE Min | 210 |
| Length | 2.9mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Frequency | 150MHz |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Transition Frequency | 150MHz |
| Width | 1.5mm |
| RoHS | Compliant |
Download the complete datasheet for Panasonic DMC201010R to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.