The Panasonic DRA5114E0L is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It operates within a temperature range of -55°C to 150°C and is packaged in a halogen-free and RoHS-compliant SC-85 package. The transistor is suitable for surface mount applications and is available in tape and reel packaging.
PackageSC
MountingSurface Mount
PolarityPNP
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Technical Specifications
Panasonic DRA5114E0L technical specifications.
General
| Package/Case | SC |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | -250mV |
| Collector-emitter Voltage-Max | 250mV |
| Continuous Collector Current | -100mA |
| Height | 0.8mm |
| Length | 2mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Width | 1.25mm |
Compliance
| RoHS | Compliant |
Datasheet
Panasonic DRA5114E0L Datasheet
Download the complete datasheet for Panasonic DRA5114E0L to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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