PNP Bipolar Junction Transistor (BJT) for small signal applications. Features a 50V collector-emitter voltage and 0.2A maximum DC collector current. This single-element transistor offers 200mW maximum power dissipation and a minimum DC current gain of 150. Packaged in a 3-pin Mini3-G3-B surface-mount plastic case with dimensions of 2.9mm x 1.5mm x 1.1mm. Operates across a temperature range of -55°C to 150°C.
PackageMini3-G3-B
MountingSurface Mount
Quick Jump:
Technical Specifications
Panasonic DSA2005R technical specifications.
General
Package/Case
Mini3-G3-B
Pin Count
3
PCB
3
Package Length (mm)
2.9
Package Width (mm)
1.5
Package Height (mm)
1.1
Seated Plane Height (mm)
1.1
Pin Pitch (mm)
0.95
Package Material
Plastic
Mounting
Surface Mount
Type
PNP
Configuration
Single
Number of Elements per Chip
1
Maximum Collector Base Voltage
60V
Maximum Emitter Base Voltage
6V
Maximum Collector-Emitter Voltage
50V
Maximum DC Collector Current
0.2A
Maximum Power Dissipation
200mW
Material
Si
Minimum DC Current Gain
150@1mA@6V
Maximum Transition Frequency
150(Typ)MHz
Category
Bipolar Small Signal
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
61058
EU RoHS
Yes
HTS Code
8541210075
Schedule B
8541210080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2002/95/EC
Datasheet
Panasonic DSA2005R Datasheet
Download the complete datasheet for Panasonic DSA2005R to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.