PNP Bipolar Junction Transistor (BJT) for small signal applications. Features a 50V collector-emitter voltage and 0.2A maximum DC collector current, with 200mW power dissipation. This single-element, silicon transistor is housed in a 3-pin Mini3-G3-B surface-mount plastic package with a 0.95mm pin pitch. Operating temperature range is -55°C to 150°C.
PackageMini3-G3-B
MountingSurface Mount
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Technical Specifications
Panasonic DSA2005S technical specifications.
General
Package/Case
Mini3-G3-B
Pin Count
3
PCB
3
Package Length (mm)
2.9
Package Width (mm)
1.5
Package Height (mm)
1.1
Seated Plane Height (mm)
1.1
Pin Pitch (mm)
0.95
Package Material
Plastic
Mounting
Surface Mount
Type
PNP
Configuration
Single
Number of Elements per Chip
1
Maximum Collector Base Voltage
60V
Maximum Emitter Base Voltage
6V
Maximum Collector-Emitter Voltage
50V
Maximum DC Collector Current
0.2A
Maximum Power Dissipation
200mW
Material
Si
Minimum DC Current Gain
200@1mA@6V
Maximum Transition Frequency
150(Typ)MHz
Category
Bipolar Small Signal
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
61058
EU RoHS
Yes
HTS Code
8541210075
Schedule B
8541210080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2002/95/EC
Datasheet
Panasonic DSA2005S Datasheet
Download the complete datasheet for Panasonic DSA2005S to view detailed technical specifications.
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