MTM761110LBF

P-channel Silicon JFET with a continuous drain current of -4A and a drain-to-source breakdown voltage of -12V. Features low on-resistance of 34mR (max) and 41mR (drain to source), with a gate-to-source voltage of 8V. This surface-mount device, housed in a compact WSMINI6-F1-B (SC-113DA) 6-pin package, offers a turn-on delay of 9ns and turn-off delay of 270ns. Operating temperature range is -40°C to 85°C, with a maximum power dissipation of 700mW. HALOGEN FREE and RoHS COMPLIANT.