Ultra high frequency NPN RF bipolar transistor designed for demanding applications. Features a 60mA continuous collector current and a 12V collector-emitter breakdown voltage. Operates across an 8GHz frequency range with a 17dB gain and 8GHz gain bandwidth product. Packaged as a silicon die, this lead-free and RoHS compliant component offers a wide operating temperature range from -60°C to 200°C.
Frequency8GHz
PackageDIE
MountingSurface Mount
PolarityNPN
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Technical Specifications
Broadcom AT-41500-GP4 technical specifications.
General
| Package/Case | DIE |
| Collector Base Voltage (VCBO) | 20V |
| Collector Emitter Breakdown Voltage | 12V |
| Collector Emitter Voltage (VCEO) | 12V |
| Collector-emitter Voltage-Max | 12V |
| Continuous Collector Current | 60mA |
| Emitter Base Voltage (VEBO) | 1.5V |
| Frequency | 8GHz |
| Gain | 17dB |
| Gain Bandwidth Product | 8GHz |
| Lead Free | Lead Free |
| Max Collector Current | 60mA |
| Max Frequency | 8GHz |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -60°C |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| Package Quantity | 100 |
| Packaging | Tray |
| Polarity | NPN |
| Power Dissipation | 500mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 8GHz |
Compliance
| RoHS | Compliant |
Datasheet
Broadcom AT-41500-GP4 Datasheet
Download the complete datasheet for Broadcom AT-41500-GP4 to view detailed technical specifications.
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