
General purpose rectifier diode featuring a 75V repetitive reverse voltage and 200mA average rectified current. This silicon diode offers a 4ns reverse recovery time and 500mW power dissipation. Encased in a compact DO-35 package, it supports through-hole mounting and operates across a wide temperature range from -65°C to 175°C. The component is halogen-free, RoHS compliant, and supplied in tape and reel packaging.
Vishay 1N914TR technical specifications.
| Average Rectified Current | 200mA |
| Package/Case | DO-35 |
| Current Rating | 200mA |
| Forward Current | 200mA |
| Height | 1.7mm |
| Lead Free | Lead Free |
| Length | 3.9mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 500mW |
| Max Repetitive Reverse Voltage (Vrrm) | 75V |
| Max Reverse Current | 5uA |
| Max Reverse Leakage Current | 5nA |
| Max Reverse Voltage (DC) | 75V |
| Max Surge Current | 1A |
| Mount | Through Hole |
| Output Current | 200mA |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Peak Non-Repetitive Surge Current | 4A |
| Polarity | Standard |
| Power Dissipation | 500mW |
| Radiation Hardening | No |
| Reverse Recovery Time | 4ns |
| Reverse Recovery Time-Max | 4ns |
| RoHS Compliant | Yes |
| DC Rated Voltage | 100V |
| Width | 1.7mm |
| RoHS | Compliant |
Download the complete datasheet for Vishay 1N914TR to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
